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HAT1090C - Pch Single Power Mosfet -20V -2.5A …
WebHAT1090C Rev.4.00, Jun. 13, 2005, page 2 of 6 Electrical Characteristics (Ta = 25°C) Item Symbol Min. Typ. Max. Unit Test Conditions Drain to Source breakdown voltage V (BR)DSS –20 — — V I D = –10 mA, V GS = 0 Gate to Source breakdown voltage V (BR)GSS ±12 — — V I G = ±100 µA, V DS = 0 Gate to Source leakage current I WebType Designator: HAT1097RJ Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 2 W Maximum Drain-Source Voltage Vds : 60 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Drain Current Id : 5 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 21 nC Rise Time (tr): 15 nS how to install carpet against tile
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WebHAT1090C Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 50 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • … WebThe HAT1090C is a Pch Single Power Mosfet -20V -2.5A 65Mohm Cmfpak6. メインコンテンツに移動 Search. 検索したいキーワードを入力してください。 Cancel. WebPart#:HAT1090C-EL-E Manufacturers:Renesas Electronics America Description:MICROCONTROLLER In Stock:5157 RFQ Part#:HAT2160H-EL-E Manufacturers:Renesas Electronics America Description:MOSFET N-CH 20V 60A LFPAK In Stock:69614 RFQ Part#:HAT1072H-EL-E Manufacturers:Renesas Electronics America … jon duncan and associates